Номер части:
Журнал
ISSN: 2411-6467 (Print)
ISSN: 2413-9335 (Online)
Статьи, опубликованные в журнале, представляется читателям на условиях свободной лицензии CC BY-ND

STUDY THE EFFECT OF (HF / H2O2) CONCENTRATION ON POROUS SILICON NANOWIRES BIOAPPLICATIONS BY AG-ASSISTED ELECTROLESS ETCHING METHOD (53-57)



Науки и перечень статей вошедших в журнал:
DOI:
Дата публикации статьи в журнале: 2018/12/10
Название журнала: Евразийский Союз Ученых — публикация научных статей в ежемесячном научном журнале, Выпуск: 56, Том: 1, Страницы в выпуске: 53-57
Автор: Muhannad M. Qassime
, Department of Nano- and Biomedical Technologies, Saratov State University, Ministry of Science and Technology, Department of Chemical and Pharmaceutical Analysis, Saratov
Автор: D.O. Kochnev
, Department of Nano- and Biomedical Technologies, Saratov State University, Saratov
Автор: Denis V. Terin
, Department of Nano- and Biomedical Technologies, Saratov State University, Saratov
Анотация: We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag+) ions assisted electroless etching method we prepare vertical and single crystalline PSiNWs via a twostep metal-assisted electroless etching method. The porosity of the nanowires is restricted by etchant concentration, etching time and doping lever of the silicon wafer. The diffusion of Ag+ ions could lead to the nucleation of silver nanoparticles on the nanowires and open new etching ways. Like porous silicon (PS), these PSiNWs also show excellent photoluminescence (PL) properties. The PL intensity increases with porosity, with an enhancement of about 100 times observed in our condition experiments. A “red-shift” of the PL peak is also found. These PSiNWs fabricated using the electroless etching method can find useful applications in biomedical and optical sensors.
Ключевые слова: Porous silicon nanowires, Electroless etching,Silver catalyst,Porosity Photoluminescence,
Данные для цитирования: Muhannad M. Qassime D.O. Kochnev Denis V. Terin. STUDY THE EFFECT OF (HF / H2O2) CONCENTRATION ON POROUS SILICON NANOWIRES BIOAPPLICATIONS BY AG-ASSISTED ELECTROLESS ETCHING METHOD (53-57) // Евразийский Союз Ученых — публикация научных статей в ежемесячном научном журнале. Химические науки. 2018/12/10; 56(1):53-57.

Список литературы: 1. Sripanyakorn S., Jugdaohsingh R., Nutrition Bull. 30 (2005) 222. 2. Parkilla T., Hakala M., Kautiainen H., Leppilahti J., Belt E.A., Scand.J Plast.Reconstr. Surg. 40, (2006) 297-301. 3. Chan CK, Peng HL, Liu G, McIlwrath K, Zhang XF, Huggins RA, Cui Y: Nat. Nanotechnol. 3 (2008) 31. 4. Y. Qu, H. Zhou, and X. Duan ,Nanoscale3. 3(10) (2011) 4060. 5. Z. G. Bai, D. P. Yu, J. J. Wang, Y. H. Zou, W. Qian, J. S. Fu, S. Q. Feng, J. Xu, and L. P. You, Mater. Sci. Eng., B72 (2000)117. 6. Canham L.T. Biomedical MEMS: Clinical Applications of Silicon Technology, Inst. of Physics. 921 (2003).-7503. 7. J. Paczesny, A. Kamińska, W. Adamkiewicz, K.Winkler, K. Sozanski, M.Wadowska, I. Dziecielewski, R.Holyst , Chem. Mater. 24 (2012).3667 8. Lehman V. Electrochemistry of silicon: instrumentation, science, materials and applications. WileyVCH, Weinheim. (2002)286. 9. T.E. Goto, R.F. Lopez, O.N. Oliveira Jr., L. Caseli ,Langmuir .26 (2010) 11135 10. A-M.S. Aurélie, C J. B. Loï, A.M. Christophe, P.G-E.Agnès, Langmuir. 26 (2009) 2160. 11. M.L. Hammock, O. Knopfmacher, B.D. Naab, J.B.H.Tok, Z. Bao, ACS Nano.7 (2013)3970. 12. D.F. Moyano, V.M. Rotello, Langmuir .27 (2011)10376. 13. T.E. Goto, R.F. Lopez, O.N. Oliveira Jr., L. Caseli ,Langmuir. 26 11135(2010). 13. A-M.S. Aurélie, C J. B. Loï, A.M. Christophe , P.G-E.Agnès, Langmuir 26 (2009).2160. 14. A. Najar, J. Charrier, H. Ajlani, N. Lorrain, S. Haesaert, M. Oueslati, and L. Haji, Mater. Sci. Eng., 146B, 260 (2008). 15. A. Najar, N. Lorrain, H. Ajlani, J. Charrier, M. Oueslati, and L. Haji,Appl. Surf. Sci. 256 (2009) 581. 16. A. Najar, H. Ajlani, J. Charrier, N. Lorrain, S. Haesaert, M. Oueslati, and L. Haji, Physica B 396 (2007) 145. 17. H. Koyama, T. Nakagawa, T. Ozaki, and N. Koshida, Appl. Phys. Lett. 65 (1994) 1656. 18. L. T. Canham, M. R. Houlton, W. Y. Leong, C. Pickering, and J. M. Keen,J. Appl. Phys. 70 (1991) 422. 19. Y. Huang, X. Duan, and C. M. Lieber, Small 1, (2005) 142. 20. M. T. Bohr, IEEE Trans. Nanotechnol. 1, (2002) 56. 21. C. M. Lieber, Solid State Commun. 107, (1998) 607. 22. Y. N. Xia, P. D. Yang, Y. G. Sun, Y. Wu, N. Mayers, B. Gates, Y. Yin, F.Kim, and H. Yan, Adv. Mater. 15 (2003) 353. 23. A. I. Hochbaum, D. Gargas, Y. J. Hwang, and P. Yang, Nano Lett. 9, (2009) 3550. 24. D. Kumar, S. K. Srivastava, P. K. Singh, K. N. Sood, V. N. Singh, N. Dilawar,and M. Husain, J. Nanopart. Res. 12, (2010) 2267. 25. S. K. Srivastava, D. Kumar, P. K. Singh, M. Kar, V. Kumar, and M.Husain, Sol. Energy Mater. Sol. Cells 94(2010) 1506. 26. K. Q. Peng, Y. J. Yan, S. P. Gao, and J. Zhu, Adv. Mater. 14, (2002) 1164. 27. T. Qiu, X. L. Wu, Y. F. Mei, G. J. Wan, P. K. Chu, and G. G. Siu, J. Cryst.Growth. 277 (2005) 143. 28. X. Zhong, Y. Qu, Y. C. Lin, L. Liao, and X. Duan, ACS Appl. Mater.Interfaces. 3 (2011) 261–270. 29. E. S. Kooij, K. Butter, and J. J. Kelly, Electrochem. Solid State Lett. 2, (1999) 178. 30. D. R. Turner, J. Electrochem. Soc. 107 (1960) 810. 31. Y. Qu, H. Zhou, and X. Duan, Nanoscale 3 (2011) 4060. 32. Peng KQ, Wang X, Lee ST. Appl. 2009. p. 243112


Записи созданы 9819

Похожие записи

Начните вводить, то что вы ищите выше и нажмите кнопку Enter для поиска. Нажмите кнопку ESC для отмены.

Вернуться наверх
404: Not Found404: Not Found